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MITSUBISHI Nch POWER MOSFET
FS10KM-10
HIGH-SPEED SWITCHING USE
FS10KM-10
OUTLINE DRAWING
10 0.3 6.5 0.3 3 0.3
Dimensions in mm
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
0.75 0.15
2.54 0.25
2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE
123 2.6 0.2
w
VDSS ................................................................................ 500V rDS (ON) (MAX) .............................................................. 0.90 ID ......................................................................................... 10A Viso ................................................................................ 2000V
q
e
TO-220FN
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 500 30 10 30 35 -55 ~ +150 -55 ~ +150 2000 2.0
Unit V V A A W C C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FS10KM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 30 -- -- 2 -- -- 3.3 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.70 3.5 5.5 1100 135 20 20 30 95 35 1.5 -- Max. -- -- 10 1 4 0.90 4.5 -- -- -- -- -- -- -- -- 2.0 3.57
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 7 5 tw=10s 100s 1ms 10ms TC = 25C Single Pulse DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10 10V PD= 6V 8V 35W DRAIN CURRENT ID (A) 8 TC = 25C Pulse Test 6
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 35W 8V TC = 25C Pulse Test 6V
20
DRAIN CURRENT ID (A)
16
12
8
4 5V 2
4
5V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25C Pulse Test 1.6 VGS = 10V 20V
TC = 25C Pulse Test 32
24 ID = 15A 16 10A 8 5A 0 0 4 8 12 16 20
1.2
0.8
0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25C VDS = 50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC=25C 75C 150C
DRAIN CURRENT ID (A)
16
12
3 2 100 7 5 3 2 10-1 -1 10 23 5 7 100
8
4
0
0
4
8
12
16
20
23
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 7 5 3 2 102 7 5 3 2 Coss Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 10-1 23 5 7 100 23 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
tf tr td(on) 5 7 101
Crss
101 Tch = 25C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KM-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 40 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
16 VDS = 100V 200V 12 400V 8
SOURCE CURRENT IS (A)
Tch = 25C ID = 10A
32 TC=125C 24 25C 75C 8
16
4
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.0
2.0
1.0
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25C)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10-1 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 Single Pulse
tw T D= tw T
1.0
0.8
0.6
0.4
-50
0
50
100
150
10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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